Manufacturer Product Number:
DMJ65H430SCTI
Product Overview
Manufacturer:
Diodes Incorporated
DiGi Electronics Part Number:
DMJ65H430SCTI-DG
Description:
MOSFET BVDSS: 501V~650V ITO-220A
Detailed Description:
N-Channel 650 V 14A (Tc) 2.5W (Ta), 50W (Tc) Through Hole ITO220AB-N (Type HE)
Inventory:
12986538
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DMJ65H430SCTI Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Diodes Incorporated
Packaging
-
Series
-
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
14A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
430mOhm @ 5A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
24.5 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
775 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
2.5W (Ta), 50W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
ITO220AB-N (Type HE)
Package / Case
TO-220-3 Full Pack, Isolated Tab
Base Product Number
DMJ65
Additional Information
Other Names
31-DMJ65H430SCTI
Standard Package
50
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
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