DMN2009USS-13
Manufacturer Product Number:

DMN2009USS-13

Product Overview

Manufacturer:

Diodes Incorporated

DiGi Electronics Part Number:

DMN2009USS-13-DG

Description:

MOSFET N-CH 20V 8SOIC
Detailed Description:
N-Channel 20 V 12.1A (Ta) 1.4W Surface Mount 8-SO

Inventory:

1557 Pcs New Original In Stock
12891619
Request Quote
Quantity
Minimum 1
num_del num_add
*
*
*
*
(*) is mandatory
We'll get back to you within 24 hours
SUBMIT

DMN2009USS-13 Technical Specifications

Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Diodes Incorporated
Packaging
Tape & Reel (TR)
Series
-
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
12.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 10V
Rds On (Max) @ Id, Vgs
8mOhm @ 12A, 10V
Vgs(th) (Max) @ Id
1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
34 nC @ 10 V
Vgs (Max)
±12V
Input Capacitance (Ciss) (Max) @ Vds
1706 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
1.4W
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-SO
Package / Case
8-SOIC (0.154", 3.90mm Width)
Base Product Number
DMN2009

Additional Information

Other Names
31-DMN2009USS-13DKR
31-DMN2009USS-13TR
DMN2009USS-13DI
31-DMN2009USS-13CT
DMN2009USS-13DI-DG
Standard Package
2,500

Environmental & Export Classification

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
3 (168 Hours)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
Related Products
diodes

DMTH10H015SPS-13

MOSFET N-CH 100V PWRDI5060

toshiba-semiconductor-and-storage

SSM6K407TU,LF

MOSFET N-CH 60V 2A UF6

diodes

DMN2400UFDQ-13

MOSFET N-CH 20V 900MA 3DFN

diodes

DMP1005UFDF-13

MOSFET P-CH 12V 26A 6UDFN