Manufacturer Product Number:
FCP11N60N
Product Overview
Manufacturer:
Fairchild Semiconductor
DiGi Electronics Part Number:
FCP11N60N-DG
Description:
POWER FIELD-EFFECT TRANSISTOR, 1
Detailed Description:
N-Channel 600 V 10.8A (Tc) 94W (Tc) Through Hole TO-220-3
Inventory:
1700 Pcs New Original In Stock
12946050
Request Quote
Quantity
Minimum 1
Minimum 1
hM2Z
(*) is mandatory
We'll get back to you within 24 hours
We'll get back to you within 24 hours
SUBMIT
FCP11N60N Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Packaging
Bulk
Series
SupreMOS™
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
10.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
299mOhm @ 5.4A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
35.6 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
1505 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
94W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220-3
Package / Case
TO-220-3
Datasheet & Documents
Datasheets
Additional Information
Other Names
2156-FCP11N60N
FAIFSCFCP11N60N
Standard Package
173
Environmental & Export Classification
ECCN
EAR99
HTSUS
8542.39.0001
DIGI Certification
Related Products
AUIRF7675M2TR
AUIRF7675M2 - 120V-300V N-CHANNE
FCP16N60N
POWER FIELD-EFFECT TRANSISTOR, 1
2SK2632LS-CB11
2SK2632 - 2.5A, 800V, 4.8OHM, N-
