FDB8444
Manufacturer Product Number:

FDB8444

Product Overview

Manufacturer:

Fairchild Semiconductor

DiGi Electronics Part Number:

FDB8444-DG

Description:

POWER FIELD-EFFECT TRANSISTOR, 7
Detailed Description:
N-Channel 40 V 70A (Tc) 167W (Tc) Surface Mount TO-263 (D2PAK)

Inventory:

167141 Pcs New Original In Stock
12947223
Request Quote
Quantity
Minimum 1
num_del num_add
*
*
*
*
(*) is mandatory
We'll get back to you within 24 hours
SUBMIT

FDB8444 Technical Specifications

Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Packaging
Bulk
Series
PowerTrench®
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
40 V
Current - Continuous Drain (Id) @ 25°C
70A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
5.5mOhm @ 70A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
128 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
8035 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
167W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-263 (D2PAK)
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet & Documents

Datasheets

Additional Information

Other Names
2156-FDB8444
FAIFSCFDB8444
Standard Package
264

Environmental & Export Classification

ECCN
EAR99
HTSUS
8542.39.0001
DIGI Certification
Related Products
fairchild-semiconductor

FDP10N60NZ

POWER FIELD-EFFECT TRANSISTOR, 1

fairchild-semiconductor

HUF75542P3

POWER FIELD-EFFECT TRANSISTOR, 7

fairchild-semiconductor

FDS8876

MOSFET N-CH 30V 12.5A 8SOIC

nxp-semiconductors

PSMN2R7-30BL,118

NOW NEXPERIA PSMN2R7-30BL - 100A