FDC653N
Manufacturer Product Number:

FDC653N

Product Overview

Manufacturer:

Fairchild Semiconductor

DiGi Electronics Part Number:

FDC653N-DG

Description:

SMALL SIGNAL FIELD-EFFECT TRANSI
Detailed Description:
N-Channel 30 V 5A (Ta) 1.6W (Ta) Surface Mount SuperSOT™-6

Inventory:

2505 Pcs New Original In Stock
12946642
Request Quote
Quantity
Minimum 1
num_del num_add
*
*
*
*
(*) is mandatory
We'll get back to you within 24 hours
SUBMIT

FDC653N Technical Specifications

Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Packaging
Bulk
Series
-
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
35mOhm @ 5A, 10V
Vgs(th) (Max) @ Id
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
17 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
350 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
1.6W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
SuperSOT™-6
Package / Case
SOT-23-6 Thin, TSOT-23-6

Datasheet & Documents

Datasheets

Additional Information

Other Names
FAIFSCFDC653N
2156-FDC653N
Standard Package
1,192

Environmental & Export Classification

ECCN
EAR99
HTSUS
8542.39.0001
DIGI Certification
Related Products
fairchild-semiconductor

FDPF12N50FT

POWER FIELD-EFFECT TRANSISTOR, 1

fairchild-semiconductor

FDD8444

POWER FIELD-EFFECT TRANSISTOR, 1

fairchild-semiconductor

FDD8447L

POWER FIELD-EFFECT TRANSISTOR, 2

stmicroelectronics

STD80N4F6

MOSFET N-CH 40V 80A DPAK