Manufacturer Product Number:
FDD6612A
Product Overview
Manufacturer:
Fairchild Semiconductor
DiGi Electronics Part Number:
FDD6612A-DG
Description:
POWER FIELD-EFFECT TRANSISTOR, 9
Detailed Description:
N-Channel 30 V 9.5A (Ta), 30A (Tc) 2.8W (Ta), 36W (Tc) Surface Mount TO-252 (DPAK)
Inventory:
262253 Pcs New Original In Stock
12946719
Request Quote
Quantity
Minimum 1
Minimum 1
(*) is mandatory
We'll get back to you within 24 hours
We'll get back to you within 24 hours
SUBMIT
FDD6612A Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Packaging
Bulk
Series
PowerTrench®
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
9.5A (Ta), 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
20mOhm @ 9.5A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
9.4 nC @ 5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
660 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
2.8W (Ta), 36W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-252 (DPAK)
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63
Datasheet & Documents
Datasheets
Additional Information
Other Names
2156-FDD6612A
FAIFSCFDD6612A
Standard Package
598
Environmental & Export Classification
ECCN
EAR99
HTSUS
8542.39.0001
DIGI Certification
Related Products
AUIRF3805L
MOSFET N-CH 55V 160A TO262
FDMS0349
POWER FIELD-EFFECT TRANSISTOR
FCPF2250N80Z
MOSFET N-CH 800V 2.6A TO220F
