Manufacturer Product Number:
FDD6N25TM
Product Overview
Manufacturer:
Fairchild Semiconductor
DiGi Electronics Part Number:
FDD6N25TM-DG
Description:
POWER FIELD-EFFECT TRANSISTOR, 4
Detailed Description:
N-Channel 250 V 4.4A (Tc) 50W (Tc) Surface Mount TO-252AA
Inventory:
1059249 Pcs New Original In Stock
12946511
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FDD6N25TM Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Packaging
Bulk
Series
UniFET™
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
250 V
Current - Continuous Drain (Id) @ 25°C
4.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.1Ohm @ 2.2A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
6 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
250 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
50W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-252AA
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63
Datasheet & Documents
Datasheets
Additional Information
Other Names
2156-FDD6N25TM
ONSFSCFDD6N25TM
Standard Package
1,086
Environmental & Export Classification
ECCN
EAR99
HTSUS
8542.39.0001
DIGI Certification
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