FDG311N
Manufacturer Product Number:

FDG311N

Product Overview

Manufacturer:

Fairchild Semiconductor

DiGi Electronics Part Number:

FDG311N-DG

Description:

MOSFET N-CH 20V 1.9A SC88
Detailed Description:
N-Channel 20 V 1.9A (Ta) 750mW (Ta) Surface Mount SC-88 (SC-70-6)

Inventory:

65240 Pcs New Original In Stock
12946841
Request Quote
Quantity
Minimum 1
num_del num_add
*
*
*
*
(*) is mandatory
We'll get back to you within 24 hours
SUBMIT

FDG311N Technical Specifications

Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Packaging
Bulk
Series
PowerTrench®
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
1.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V
Rds On (Max) @ Id, Vgs
115mOhm @ 1.9A, 4.5V
Vgs(th) (Max) @ Id
1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
4.5 nC @ 4.5 V
Vgs (Max)
±8V
Input Capacitance (Ciss) (Max) @ Vds
270 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
750mW (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
SC-88 (SC-70-6)
Package / Case
6-TSSOP, SC-88, SOT-363

Datasheet & Documents

Datasheets
FDG311N Datasheet

Additional Information

Other Names
2156-FDG311N
FAIFSCFDG311N
Standard Package
1,466

Environmental & Export Classification

RoHS Status
ROHS3 Compliant
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8542.39.0001
DIGI Certification
certification_01
certification_02
certification_03
certification_04
cr
certification_015
certification_08
esd
Related Products
stmicroelectronics

STE70NM60

MOSFET N-CH 600V 70A ISOTOP

international-rectifier

IRFH7934TRPBF

MOSFET N-CH 30V 24A/76A 8PQFN

fairchild-semiconductor

FDS8882

POWER FIELD-EFFECT TRANSISTOR, 9

fairchild-semiconductor

FCPF7N60NT

POWER FIELD-EFFECT TRANSISTOR, 6