Manufacturer Product Number:
FDP39N20
Product Overview
Manufacturer:
Fairchild Semiconductor
DiGi Electronics Part Number:
FDP39N20-DG
Description:
POWER FIELD-EFFECT TRANSISTOR, 3
Detailed Description:
N-Channel 200 V 39A (Tc) 251W (Tc) Through Hole TO-220-3
Inventory:
500 Pcs New Original In Stock
12946807
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FDP39N20 Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Packaging
Bulk
Series
UniFET™
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
39A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
66mOhm @ 19.5A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
49 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
2130 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
251W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220-3
Package / Case
TO-220-3
Datasheet & Documents
Datasheets
Additional Information
Other Names
ONSFSCFDP39N20
2156-FDP39N20
Standard Package
189
Environmental & Export Classification
ECCN
EAR99
HTSUS
8542.39.0001
DIGI Certification
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