Manufacturer Product Number:
FDP8880
Product Overview
Manufacturer:
Fairchild Semiconductor
DiGi Electronics Part Number:
FDP8880-DG
Description:
POWER FIELD-EFFECT TRANSISTOR, 1
Detailed Description:
N-Channel 30 V 11A (Ta), 54A (Tc) 55W (Tc) Through Hole TO-220-3
Inventory:
62900 Pcs New Original In Stock
12946993
Request Quote
Quantity
Minimum 1
Minimum 1
(*) is mandatory
We'll get back to you within 24 hours
We'll get back to you within 24 hours
SUBMIT
FDP8880 Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Packaging
Bulk
Series
PowerTrench®
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
11A (Ta), 54A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
11.6mOhm @ 40A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
29 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1240 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
55W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220-3
Package / Case
TO-220-3
Datasheet & Documents
Datasheets
Additional Information
Other Names
FAIFSCFDP8880
2156-FDP8880
Standard Package
573
Environmental & Export Classification
ECCN
EAR99
HTSUS
8542.39.0001
DIGI Certification
Related Products
FCPF260N60E
POWER FIELD-EFFECT TRANSISTOR, N
FDPF6N60ZUT
MOSFET N-CH 600V 4.5A TO220F
FDB16AN08A0
MOSFET N-CH 75V 9A/58A D2PAK
