FQP12N60C
Manufacturer Product Number:

FQP12N60C

Product Overview

Manufacturer:

Fairchild Semiconductor

DiGi Electronics Part Number:

FQP12N60C-DG

Description:

POWER FIELD-EFFECT TRANSISTOR, 1
Detailed Description:
N-Channel 600 V 12A (Tc) 225W (Tc) Through Hole TO-220-3

Inventory:

4340 Pcs New Original In Stock
12946769
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FQP12N60C Technical Specifications

Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Packaging
Bulk
Series
QFET®
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
650mOhm @ 6A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
63 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
2290 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
225W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220-3
Package / Case
TO-220-3

Datasheet & Documents

Datasheets
Datasheet

Additional Information

Other Names
FAIFSCFQP12N60C
2156-FQP12N60C
Standard Package
166

Environmental & Export Classification

ECCN
EAR99
HTSUS
8542.39.0001
DIGI Certification
certification_01
certification_02
certification_03
certification_04
cr
certification_015
certification_08
esd
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