Manufacturer Product Number:
FQP4N20L
Product Overview
Manufacturer:
Fairchild Semiconductor
DiGi Electronics Part Number:
FQP4N20L-DG
Description:
POWER FIELD-EFFECT TRANSISTOR, 3
Detailed Description:
N-Channel 200 V 3.8A (Tc) 45W (Tc) Through Hole TO-220-3
Inventory:
2000 Pcs New Original In Stock
12946627
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FQP4N20L Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Packaging
Bulk
Series
QFET®
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
3.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
5V, 10V
Rds On (Max) @ Id, Vgs
1.35Ohm @ 1.9A, 10V
Vgs(th) (Max) @ Id
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
5.2 nC @ 5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
310 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
45W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220-3
Package / Case
TO-220-3
Datasheet & Documents
Datasheets
Additional Information
Other Names
FAIFSCFQP4N20L
2156-FQP4N20L
Standard Package
548
Environmental & Export Classification
ECCN
EAR99
HTSUS
8542.39.0001
DIGI Certification
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