FQPF13N50C
Manufacturer Product Number:

FQPF13N50C

Product Overview

Manufacturer:

Fairchild Semiconductor

DiGi Electronics Part Number:

FQPF13N50C-DG

Description:

QFC 500V 480MOHM TO220F
Detailed Description:
N-Channel 500 V 13A (Tc) 48W (Tc) Through Hole TO-220F

Inventory:

17000 Pcs New Original In Stock
12940925
Request Quote
Quantity
Minimum 1
num_del num_add
*
*
*
*
(*) is mandatory
We'll get back to you within 24 hours
SUBMIT

FQPF13N50C Technical Specifications

Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Packaging
Tube
Series
QFET®
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
500 V
Current - Continuous Drain (Id) @ 25°C
13A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
480mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
56 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
2055 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
48W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220F
Package / Case
TO-220-3 Full Pack
Base Product Number
FQPF1

Datasheet & Documents

Datasheets

Additional Information

Other Names
2156-FQPF13N50C
ONSFSCFQPF13N50C
Standard Package
232

Environmental & Export Classification

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
3 (168 Hours)
REACH Status
REACH Affected
ECCN
EAR99
HTSUS
0000.00.0000
DIGI Certification
Related Products
vishay-siliconix

SIHP068N60EF-GE3

MOSFET N-CH 600V 41A TO220AB

renesas-electronics-america

FS50KM-2#E52

DISCRETE / POWER MOSFET

vishay-siliconix

SIHG186N60EF-GE3

MOSFET N-CH 600V 8.4A TO247AC

vishay-siliconix

SIHB068N60EF-GE3

MOSFET N-CH 600V 41A D2PAK