Manufacturer Product Number:
FQU9N25TU
Product Overview
Manufacturer:
Fairchild Semiconductor
DiGi Electronics Part Number:
FQU9N25TU-DG
Description:
POWER FIELD-EFFECT TRANSISTOR, 7
Detailed Description:
N-Channel 250 V 7.4A (Tc) 2.5W (Ta), 55W (Tc) Through Hole I-PAK
Inventory:
10473 Pcs New Original In Stock
12946867
Request Quote
Quantity
Minimum 1
Minimum 1
(*) is mandatory
We'll get back to you within 24 hours
We'll get back to you within 24 hours
SUBMIT
FQU9N25TU Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Packaging
Bulk
Series
QFET®
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
250 V
Current - Continuous Drain (Id) @ 25°C
7.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
420mOhm @ 3.7A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
20 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
700 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
2.5W (Ta), 55W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
I-PAK
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Datasheet & Documents
Datasheets
Additional Information
Other Names
2156-FQU9N25TU
FAIFSCFQU9N25TU
Standard Package
538
Environmental & Export Classification
ECCN
EAR99
HTSUS
8542.39.0001
DIGI Certification
Related Products
FDD6030L
POWER FIELD-EFFECT TRANSISTOR, 5
FQP16N25C-F105
FQP16N25 - POWER FIELD-EFFECT TR
FQP10N20C
POWER FIELD-EFFECT TRANSISTOR, 9