Manufacturer Product Number:
G2R1000MT33J-TR
Product Overview
Manufacturer:
GeneSiC Semiconductor
DiGi Electronics Part Number:
G2R1000MT33J-TR-DG
Description:
3300V 1000M TO-263-7 G2R SIC MOS
Detailed Description:
N-Channel 3300 V 5A (Tc) 74W (Tc) Surface Mount TO-263-7
Inventory:
795 Pcs New Original In Stock
13239962
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G2R1000MT33J-TR Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
GeneSiC Semiconductor
Packaging
Cut Tape (CT) & Digi-Reel®
Series
LoRing™
Product Status
Active
FET Type
N-Channel
Technology
SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss)
3300 V
Current - Continuous Drain (Id) @ 25°C
5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
20V
Rds On (Max) @ Id, Vgs
1.2Ohm @ 2A, 20V
Vgs(th) (Max) @ Id
3.5V @ 2mA
Gate Charge (Qg) (Max) @ Vgs
21 nC @ 20 V
Vgs (Max)
+20V, -5V
Input Capacitance (Ciss) (Max) @ Vds
238 pF @ 1000 V
FET Feature
-
Power Dissipation (Max)
74W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-263-7
Package / Case
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Datasheet & Documents
Datasheets
Additional Information
Other Names
1242-G2R1000MT33J-TR
1242-G2R1000MT33J-TRDKR
1242-G2R1000MT33J-TRCT
Standard Package
800
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
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