Manufacturer Product Number:
G3R30MT12J
Product Overview
Manufacturer:
GeneSiC Semiconductor
DiGi Electronics Part Number:
G3R30MT12J-DG
Description:
SIC MOSFET N-CH 96A TO263-7
Detailed Description:
N-Channel 1200 V 96A (Tc) 459W (Tc) Surface Mount TO-263-7
Inventory:
68 Pcs New Original In Stock
12945351
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G3R30MT12J Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
GeneSiC Semiconductor
Packaging
Tube
Series
G3R™
Product Status
Active
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
96A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
15V
Rds On (Max) @ Id, Vgs
36mOhm @ 50A, 15V
Vgs(th) (Max) @ Id
2.69V @ 12mA
Gate Charge (Qg) (Max) @ Vgs
155 nC @ 15 V
Vgs (Max)
±15V
Input Capacitance (Ciss) (Max) @ Vds
3901 pF @ 800 V
FET Feature
-
Power Dissipation (Max)
459W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-263-7
Package / Case
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Base Product Number
G3R30
Datasheet & Documents
Datasheets
Additional Information
Other Names
1242-G3R30MT12J
Standard Package
50
Environmental & Export Classification
RoHS Status
RoHS Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
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