Manufacturer Product Number:
GP2T080A120U
Product Overview
Manufacturer:
SemiQ
DiGi Electronics Part Number:
GP2T080A120U-DG
Description:
SIC MOSFET 1200V 80M TO-247-3L
Detailed Description:
N-Channel 1200 V 35A (Tc) 188W (Tc) Through Hole TO-247-3
Inventory:
1416 Pcs New Original In Stock
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GP2T080A120U Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
SemiQ
Packaging
Tube
Series
-
Product Status
Active
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
20V
Rds On (Max) @ Id, Vgs
100mOhm @ 20A, 20V
Vgs(th) (Max) @ Id
4V @ 10mA
Gate Charge (Qg) (Max) @ Vgs
58 nC @ 20 V
Vgs (Max)
+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds
1377 pF @ 1000 V
FET Feature
-
Power Dissipation (Max)
188W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247-3
Package / Case
TO-247-3
Base Product Number
GP2T080A
Datasheet & Documents
Datasheets
Additional Information
Other Names
1560-GP2T080A120U
Standard Package
30
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Affected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
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