G080P06M
Manufacturer Product Number:

G080P06M

Product Overview

Manufacturer:

Goford Semiconductor

DiGi Electronics Part Number:

G080P06M-DG

Description:

P-60V,-195A,RD(MAX)<7.5M@-10V,VT
Detailed Description:
P-Channel 60 V 195A (Tc) 294W (Tc) Surface Mount TO-263

Inventory:

842 Pcs New Original In Stock
12993026
Request Quote
Quantity
Minimum 1
num_del num_add
*
*
*
*
(*) is mandatory
We'll get back to you within 24 hours
SUBMIT

G080P06M Technical Specifications

Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Goford Semiconductor
Packaging
Tape & Reel (TR)
Series
TrenchFET®
Product Status
Active
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
195A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
7.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
186 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
15870 pF @ 30 V
FET Feature
-
Power Dissipation (Max)
294W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-263
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet & Documents

Datasheets

Additional Information

Other Names
3141-G080P06MDKR
3141-G080P06MTR
3141-G080P06MCT
Standard Package
800

Environmental & Export Classification

RoHS Status
RoHS Compliant
Moisture Sensitivity Level (MSL)
3 (168 Hours)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
Related Products
goford-semiconductor

G1K3N10G

N100V, 5A,RD<130M@10V,VTH1V~2V,

goford-semiconductor

G1K3N10G

MOSFET N-CH 100V 5A TO-89

goford-semiconductor

G220P02D2

MOSFET P-CH 20V 8A DFN2*2-6L

diodes

DMTH47M2LFVWQ-7

MOSFET BVDSS: 31V~40V PowerDI333