Manufacturer Product Number:
G60N10T
Product Overview
Manufacturer:
Goford Semiconductor
DiGi Electronics Part Number:
G60N10T-DG
Description:
N100V,RD(MAX)<25M@10V,RD(MAX)<30
Detailed Description:
N-Channel 100 V 60A (Tc) 132W (Tc) Through Hole TO-220
Inventory:
86 Pcs New Original In Stock
12999086
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G60N10T Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Goford Semiconductor
Packaging
Tube
Series
TrenchFET®
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
17mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
146 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
3970 pF @ 50 V
FET Feature
Standard
Power Dissipation (Max)
132W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220
Package / Case
TO-220-3
Datasheet & Documents
Datasheets
Additional Information
Other Names
3141-G60N10T
4822-G60N10T
Standard Package
50
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
3 (168 Hours)
REACH Status
REACH Affected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
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