Manufacturer Product Number:
G65P06F
Product Overview
Manufacturer:
Goford Semiconductor
DiGi Electronics Part Number:
G65P06F-DG
Description:
P-CH, -60V, 65A, RD(MAX)<18M@-10
Detailed Description:
P-Channel 60 V 65A (Tc) 39W (Tc) Through Hole TO-220F
Inventory:
48 Pcs New Original In Stock
12992785
Request Quote
Quantity
Minimum 1
Minimum 1
(*) is mandatory
We'll get back to you within 24 hours
We'll get back to you within 24 hours
SUBMIT
G65P06F Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Goford Semiconductor
Packaging
Tube
Series
TrenchFET®
Product Status
Active
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
65A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
18mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
75 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
6477 pF @ 25 V
FET Feature
Standard
Power Dissipation (Max)
39W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220F
Package / Case
TO-220-3 Full Pack
Datasheet & Documents
Datasheets
Additional Information
Other Names
3141-G65P06F
4822-G65P06F
Standard Package
50
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
3 (168 Hours)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
Related Products
SQA470CEJW-T1_GE3
AUTOMOTIVE N-CHANNEL 30 V (D-S)
ISC058N04NM5ATMA1
40V 5.8M OPTIMOS MOSFET SUPERSO8
TK5R3E08QM,S1X
UMOS10 TO-220AB 80V 5.3MOHM
