Manufacturer Product Number:
GC11N65F
Product Overview
Manufacturer:
Goford Semiconductor
DiGi Electronics Part Number:
GC11N65F-DG
Description:
MOSFET N-CH 650V 11A TO-220F
Detailed Description:
N-Channel 11A (Tc) 38.5W (Tc) Through Hole TO-220F
Inventory:
10000 Pcs New Original In Stock
12978212
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GC11N65F Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Goford Semiconductor
Packaging
Tube
Series
Cool MOS™
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C
11A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
360mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Vgs (Max)
±30V
FET Feature
Standard
Power Dissipation (Max)
38.5W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220F
Package / Case
TO-220-3 Full Pack
Additional Information
Other Names
4822-GC11N65F
Standard Package
2,000
Environmental & Export Classification
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
3 (168 Hours)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
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