Manufacturer Product Number:
GC20N65T
Product Overview
Manufacturer:
Goford Semiconductor
DiGi Electronics Part Number:
GC20N65T-DG
Description:
N650V,RD(MAX)<170M@10V,VTH2.5V~4
Detailed Description:
N-Channel 650 V 20A (Tc) 151W (Tc) Through Hole TO-220
Inventory:
5 Pcs New Original In Stock
12999681
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GC20N65T Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Goford Semiconductor
Packaging
Tube
Series
Cool MOS™
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
170mOhm @ 10A, 10V
Vgs(th) (Max) @ Id
4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
39 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
1724 pF @ 100 V
FET Feature
Standard
Power Dissipation (Max)
151W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220
Package / Case
TO-220-3
Datasheet & Documents
Datasheets
Additional Information
Other Names
3141-GC20N65T
4822-GC20N65T
Standard Package
50
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
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