Manufacturer Product Number:
GT090N06S
Product Overview
Manufacturer:
Goford Semiconductor
DiGi Electronics Part Number:
GT090N06S-DG
Description:
N60V,14A,RD<8M@10V,VTH1.0V~2.4V,
Detailed Description:
N-Channel 60 V 14A (Tc) 3.1W (Tc) Surface Mount 8-SOP
Inventory:
13004408
Request Quote
Quantity
Minimum 1
Minimum 1
(*) is mandatory
We'll get back to you within 24 hours
We'll get back to you within 24 hours
SUBMIT
GT090N06S Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Goford Semiconductor
Packaging
Tape & Reel (TR)
Series
-
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
14A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
8mOhm @ 8A, 10V
Vgs(th) (Max) @ Id
2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
24 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1378 pF @ 30 V
FET Feature
-
Power Dissipation (Max)
3.1W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-SOP
Package / Case
8-SOIC (0.154", 3.90mm Width)
Datasheet & Documents
Datasheets
Additional Information
Other Names
3141-GT090N06STR
Standard Package
4,000
Environmental & Export Classification
RoHS Status
RoHS Compliant
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0000
DIGI Certification
Related Products
GSFC0603
MOSFET, P-CH, SINGLE, -3A, -60V,
AUIRFR8403TRLARMA1
MOSFET_(20V 40V)
IPB180P04P4L02AUMA2
MOSFET