GT100N12K
Manufacturer Product Number:

GT100N12K

Product Overview

Manufacturer:

Goford Semiconductor

DiGi Electronics Part Number:

GT100N12K-DG

Description:

N120V,65A,RD<12M@10V,VTH2.5V~3.5
Detailed Description:
N-Channel 120 V 65A (Tc) 75W (Tc) Surface Mount TO-252

Inventory:

2500 Pcs New Original In Stock
12997601
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GT100N12K Technical Specifications

Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Goford Semiconductor
Packaging
Tape & Reel (TR)
Series
-
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
120 V
Current - Continuous Drain (Id) @ 25°C
65A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
12mOhm @ 35A, 10V
Vgs(th) (Max) @ Id
3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
50 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2911 pF @ 60 V
FET Feature
-
Power Dissipation (Max)
75W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-252
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet & Documents

Datasheets

Additional Information

Other Names
3141-GT100N12KTR
3141-GT100N12KCT
3141-GT100N12KDKR
Standard Package
2,500

Environmental & Export Classification

RoHS Status
RoHS Compliant
Moisture Sensitivity Level (MSL)
3 (168 Hours)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0000
DIGI Certification
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