GT105N10F
Manufacturer Product Number:

GT105N10F

Product Overview

Manufacturer:

Goford Semiconductor

DiGi Electronics Part Number:

GT105N10F-DG

Description:

MOSFET N-CH 100V 33A TO-220F
Detailed Description:
N-Channel 33A (Tc) 20.8W (Tc) Through Hole TO-220F

Inventory:

60000 Pcs New Original In Stock
12986227
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GT105N10F Technical Specifications

Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Goford Semiconductor
Packaging
Tube
Series
SGT
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C
33A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
10.5mOhm @ 11A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Vgs (Max)
±20V
FET Feature
Standard
Power Dissipation (Max)
20.8W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220F
Package / Case
TO-220-3 Full Pack

Additional Information

Other Names
4822-GT105N10F
Standard Package
2,000

Environmental & Export Classification

RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
3 (168 Hours)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
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