ICE10N60FP
Manufacturer Product Number:

ICE10N60FP

Product Overview

Manufacturer:

IceMOS Technology

DiGi Electronics Part Number:

ICE10N60FP-DG

Description:

Superjunction MOSFET
Detailed Description:
N-Channel 600 V 10A (Tc) 35W (Tc) Through Hole TO-220 Full Pack

Inventory:

500 Pcs New Original In Stock
13001926
Request Quote
Quantity
Minimum 1
num_del num_add
*
*
*
*
(*) is mandatory
We'll get back to you within 24 hours
SUBMIT

ICE10N60FP Technical Specifications

Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
IceMOS Technology
Packaging
Tube
Series
-
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
10A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
330mOhm @ 5A, 10V
Vgs(th) (Max) @ Id
3.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
41 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1250 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
35W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220 Full Pack
Package / Case
TO-220-3 Full Pack, Isolated Tab

Datasheet & Documents

Datasheets

Additional Information

Other Names
5133-ICE10N60FP
Standard Package
50

Environmental & Export Classification

ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
Related Products
icemos-technology

ICE60N130W

Superjunction MOSFET

vishay-siliconix

SIHK105N60E-T1-GE3

E SERIES POWER MOSFET WITH FAST

wolfspeed

E3M0040120K

SIC, MOSFET, 40M, 1200V, TO-247-

goford-semiconductor

G2003A

MOSFET N-CH 190V 3A SOT-23-3L