BSC010NE2LSIATMA1
Manufacturer Product Number:

BSC010NE2LSIATMA1

Product Overview

Manufacturer:

Infineon Technologies

DiGi Electronics Part Number:

BSC010NE2LSIATMA1-DG

Description:

MOSFET N-CH 25V 38A/100A TDSON
Detailed Description:
N-Channel 25 V 38A (Ta), 100A (Tc) 2.5W (Ta), 96W (Tc) Surface Mount PG-TDSON-8-7

Inventory:

21251 Pcs New Original In Stock
12832511
Request Quote
Quantity
Minimum 1
num_del num_add
*
*
*
*
(*) is mandatory
We'll get back to you within 24 hours
SUBMIT

BSC010NE2LSIATMA1 Technical Specifications

Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Infineon Technologies
Packaging
Tape & Reel (TR)
Series
OptiMOS™
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
25 V
Current - Continuous Drain (Id) @ 25°C
38A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
1.05mOhm @ 30A, 10V
Vgs(th) (Max) @ Id
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
59 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
4200 pF @ 12 V
FET Feature
-
Power Dissipation (Max)
2.5W (Ta), 96W (Tc)
Operating Temperature
-
Mounting Type
Surface Mount
Supplier Device Package
PG-TDSON-8-7
Package / Case
8-PowerTDFN
Base Product Number
BSC010

Datasheet & Documents

Additional Information

Other Names
BSC010NE2LSIATMA1DKR
BSC010NE2LSIDKR
BSC010NE2LSIATMA1TR
BSC010NE2LSICT-DG
BSC010NE2LSI
BSC010NE2LSIATMA1CT
BSC010NE2LSIDKR-DG
BSC010NE2LSITR-DG
BSC010NE2LSI-DG
SP000854376
BSC010NE2LSICT
Standard Package
5,000

Environmental & Export Classification

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
Related Products
nexperia

PSMN5R0-100PS,127

MOSFET N-CH 100V 120A TO220AB

infineon-technologies

BSC079N03LSCGATMA1

MOSFET N-CH 30V 14A/50A TDSON

nexperia

BUK7M6R3-40EX

MOSFET N-CH 40V 70A LFPAK33

nexperia

PMV130ENEA/DG/B2R

MOSFET N-CH 40V 2.1A TO236AB