BSC091N03MSCGATMA1
Manufacturer Product Number:

BSC091N03MSCGATMA1

Product Overview

Manufacturer:

Infineon Technologies

DiGi Electronics Part Number:

BSC091N03MSCGATMA1-DG

Description:

POWER FIELD-EFFECT TRANSISTOR, 1
Detailed Description:
N-Channel 30 V 12A (Ta), 44A (Tc) 2.5W (Ta), 28W (Tc) Surface Mount PG-TDSON-8-6

Inventory:

39335 Pcs New Original In Stock
12946659
Request Quote
Quantity
Minimum 1
num_del num_add
*
*
*
*
(*) is mandatory
We'll get back to you within 24 hours
SUBMIT

BSC091N03MSCGATMA1 Technical Specifications

Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Infineon Technologies
Packaging
Bulk
Series
SIPMOS®
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
12A (Ta), 44A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
9.1mOhm @ 30A, 10V
Vgs(th) (Max) @ Id
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
20 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1500 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
2.5W (Ta), 28W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TDSON-8-6
Package / Case
8-PowerTDFN

Datasheet & Documents

Datasheets
BSC091N03MSCGATMA1 Datasheet

Additional Information

Other Names
INFINFBSC091N03MSCGATMA1
2156-BSC091N03MSCGATMA1
Standard Package
1,094

Environmental & Export Classification

ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
certification_01
certification_02
certification_03
certification_04
cr
certification_015
certification_08
esd
Related Products
fairchild-semiconductor

FDC654P

SMALL SIGNAL FIELD-EFFECT TRANSI

diodes

BSS127SSN-7

MOSFET N-CH 600V 50MA SC59

national-semiconductor

CSD18503KCS

CSD18503KCS 40V, N CHANNEL NEXFE

fairchild-semiconductor

FDMS0355S

POWER FIELD-EFFECT TRANSISTOR