BSG0810NDIATMA1
Manufacturer Product Number:

BSG0810NDIATMA1

Product Overview

Manufacturer:

Infineon Technologies

DiGi Electronics Part Number:

BSG0810NDIATMA1-DG

Description:

MOSFET 2N-CH 25V 19A/39A TISON8
Detailed Description:
Mosfet Array 25V 19A, 39A 2.5W Surface Mount PG-TISON-8

Inventory:

9870 Pcs New Original In Stock
12801876
Request Quote
Quantity
Minimum 1
num_del num_add
*
*
*
*
(*) is mandatory
We'll get back to you within 24 hours
SUBMIT

BSG0810NDIATMA1 Technical Specifications

Category
FETs, MOSFETs, FET, MOSFET Arrays
Manufacturer
Infineon Technologies
Packaging
Tape & Reel (TR)
Series
OptiMOS™
Product Status
Active
Technology
MOSFET (Metal Oxide)
Configuration
2 N-Channel (Dual) Asymmetrical
FET Feature
Logic Level Gate, 4.5V Drive
Drain to Source Voltage (Vdss)
25V
Current - Continuous Drain (Id) @ 25°C
19A, 39A
Rds On (Max) @ Id, Vgs
3mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
8.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds
1040pF @ 12V
Power - Max
2.5W
Operating Temperature
-55°C ~ 155°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-PowerTDFN
Supplier Device Package
PG-TISON-8
Base Product Number
BSG0810

Datasheet & Documents

Additional Information

Other Names
BSG0810NDIATMA1-DG
448-BSG0810NDIATMA1TR
SP001241674
448-BSG0810NDIATMA1CT
448-BSG0810NDIATMA1DKR
Standard Package
5,000

Environmental & Export Classification

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
Related Products
infineon-technologies

IRFH7911TRPBF

MOSFET 2N-CH 30V 13A/28A PQFN

infineon-technologies

IPG20N06S4L26AATMA1

MOSFET 2N-CH 60V 20A 8TDSON

infineon-technologies

BSO330N02KGFUMA1

MOSFET 2N-CH 20V 5.4A 8DSO

infineon-technologies

BSO303PNTMA1

MOSFET 2P-CH 30V 8.2A 8DSO