Manufacturer Product Number:
IMDQ75R016M1HXUMA1
Product Overview
Manufacturer:
Infineon Technologies
DiGi Electronics Part Number:
IMDQ75R016M1HXUMA1-DG
Description:
SILICON CARBIDE MOSFET
Detailed Description:
N-Channel 750 V 98A (Tc) 384W (Tc) Surface Mount PG-HDSOP-22-1
Inventory:
13269161
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IMDQ75R016M1HXUMA1 Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Infineon Technologies
Packaging
Tape & Reel (TR)
Series
CoolSiC™
Product Status
Active
FET Type
N-Channel
Technology
SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss)
750 V
Current - Continuous Drain (Id) @ 25°C
98A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
15V, 20V
Rds On (Max) @ Id, Vgs
15mOhm @ 41.5A, 20A
Vgs(th) (Max) @ Id
5.6V @ 14.9mA
Gate Charge (Qg) (Max) @ Vgs
80 nC @ 18 V
Vgs (Max)
+23V, -5V
Input Capacitance (Ciss) (Max) @ Vds
2869 pF @ 500 V
FET Feature
-
Power Dissipation (Max)
384W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
-
Qualification
-
Mounting Type
Surface Mount
Supplier Device Package
PG-HDSOP-22-1
Package / Case
22-PowerBSOP Module
Datasheet & Documents
Datasheets
Additional Information
Other Names
SP005588264
448-IMDQ75R016M1HXUMA1DKR
448-IMDQ75R016M1HXUMA1TR
448-IMDQ75R016M1HXUMA1CT
Standard Package
750
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
3 (168 Hours)
REACH Status
REACH Unaffected
ECCN
EAR99
DIGI Certification
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