Manufacturer Product Number:
IMT65R022M1HXUMA1
Product Overview
Manufacturer:
Infineon Technologies
DiGi Electronics Part Number:
IMT65R022M1HXUMA1-DG
Description:
SILICON CARBIDE MOSFET
Detailed Description:
650 V Surface Mount PG-HSOF-8-1
Inventory:
1984 Pcs New Original In Stock
12989097
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IMT65R022M1HXUMA1 Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Infineon Technologies
Packaging
Tape & Reel (TR)
Series
CoolSiC™
Product Status
Active
FET Type
-
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
-
Drive Voltage (Max Rds On, Min Rds On)
18V
Rds On (Max) @ Id, Vgs
-
Vgs(th) (Max) @ Id
-
Vgs (Max)
-
FET Feature
-
Power Dissipation (Max)
-
Operating Temperature
-
Mounting Type
Surface Mount
Supplier Device Package
PG-HSOF-8-1
Package / Case
8-PowerSFN
Additional Information
Other Names
448-IMT65R022M1HXUMA1CT
SP005716811
448-IMT65R022M1HXUMA1TR
448-IMT65R022M1HXUMA1DKR
Standard Package
2,000
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
Not Applicable
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
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