Manufacturer Product Number:
IPA65R650CEXKSA1
Product Overview
Manufacturer:
Infineon Technologies
DiGi Electronics Part Number:
IPA65R650CEXKSA1-DG
Description:
MOSFET N-CH 650V 7A TO220
Detailed Description:
N-Channel 650 V 7A (Tc) 28W (Tc) Through Hole PG-TO220-3-FP
Inventory:
12799816
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IPA65R650CEXKSA1 Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Infineon Technologies
Packaging
Tube
Series
CoolMOS™ CE
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
650mOhm @ 2.1A, 10V
Vgs(th) (Max) @ Id
3.5V @ 210µA
Gate Charge (Qg) (Max) @ Vgs
23 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
440 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
28W (Tc)
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO220-3-FP
Package / Case
TO-220-3 Full Pack
Base Product Number
IPA65R650
Datasheet & Documents
Datasheets
Additional Information
Other Names
SP001295804
IPA65R650CEXKSA1-DG
448-IPA65R650CEXKSA1
Standard Package
50
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Alternative Models
PART NUMBER
IXTP4N70X2M
MANUFACTURER
IXYS
QUANTITY AVAILABLE
24
DiGi PART NUMBER
IXTP4N70X2M-DG
UNIT PRICE
1.35
SUBSTITUTE TYPE
MFR Recommended
DIGI Certification
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