IPB025N10N3GE8187ATMA1
Manufacturer Product Number:

IPB025N10N3GE8187ATMA1

Product Overview

Manufacturer:

Infineon Technologies

DiGi Electronics Part Number:

IPB025N10N3GE8187ATMA1-DG

Description:

MOSFET N-CH 100V 180A TO263-7
Detailed Description:
N-Channel 100 V 180A (Tc) 300W (Tc) Surface Mount PG-TO263-7

Inventory:

12800296
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IPB025N10N3GE8187ATMA1 Technical Specifications

Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Infineon Technologies
Packaging
Tape & Reel (TR)
Series
OptiMOS™
Product Status
Not For New Designs
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
180A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Rds On (Max) @ Id, Vgs
2.5mOhm @ 100A, 10V
Vgs(th) (Max) @ Id
3.5V @ 275µA
Gate Charge (Qg) (Max) @ Vgs
206 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
14800 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
300W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TO263-7
Package / Case
TO-263-7, D2PAK (6 Leads + Tab)
Base Product Number
IPB025

Datasheet & Documents

Additional Information

Other Names
IPB025N10N3 G E8187-DG
SP000939338
IPB025N10N3 G E8187
IPB025N10N3GE8187ATMA1TR
Standard Package
1,000

Environmental & Export Classification

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Alternative Models

PART NUMBER
IPB025N10N3GATMA1
MANUFACTURER
Infineon Technologies
QUANTITY AVAILABLE
627
DiGi PART NUMBER
IPB025N10N3GATMA1-DG
UNIT PRICE
3.25
SUBSTITUTE TYPE
Parametric Equivalent
DIGI Certification
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