Manufacturer Product Number:
IPB038N12N3GATMA1
Product Overview
Manufacturer:
Infineon Technologies
DiGi Electronics Part Number:
IPB038N12N3GATMA1-DG
Description:
MOSFET N-CH 120V 120A D2PAK
Detailed Description:
N-Channel 120 V 120A (Tc) 300W (Tc) Surface Mount PG-TO263-3
Inventory:
1575 Pcs New Original In Stock
12800955
Request Quote
Quantity
Minimum 1
Minimum 1
(*) is mandatory
We'll get back to you within 24 hours
We'll get back to you within 24 hours
SUBMIT
IPB038N12N3GATMA1 Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Infineon Technologies
Packaging
Tape & Reel (TR)
Series
OptiMOS™
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
120 V
Current - Continuous Drain (Id) @ 25°C
120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
3.8mOhm @ 100A, 10V
Vgs(th) (Max) @ Id
4V @ 270µA
Gate Charge (Qg) (Max) @ Vgs
211 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
13800 pF @ 60 V
FET Feature
-
Power Dissipation (Max)
300W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TO263-3
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Base Product Number
IPB038
Datasheet & Documents
Datasheets
Additional Information
Other Names
IPB038N12N3 GTR
IPB038N12N3 GCT
IPB038N12N3 G
IPB038N12N3G
IPB038N12N3GATMA1CT
IPB038N12N3 GDKR-DG
IPB038N12N3 GCT-DG
IPB038N12N3 GDKR
IPB038N12N3 GTR-DG
IPB038N12N3GATMA1DKR
IPB038N12N3 G-DG
IPB038N12N3GATMA1TR
SP000694160
Standard Package
1,000
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
Related Products
IPB60R125CPATMA1
MOSFET N-CH 600V 25A TO263-3
IPA60R099C7XKSA1
MOSFET N-CH 600V 12A TO220-FP
IPD122N10N3GBTMA1
MOSFET N-CH 100V 59A TO252-3
