Manufacturer Product Number:
IPB110N20N3LFATMA1
Product Overview
Manufacturer:
Infineon Technologies
DiGi Electronics Part Number:
IPB110N20N3LFATMA1-DG
Description:
MOSFET N-CH 200V 88A TO263-3
Detailed Description:
N-Channel 200 V 88A (Tc) 250W (Tc) Surface Mount PG-TO263-3
Inventory:
526 Pcs New Original In Stock
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IPB110N20N3LFATMA1 Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Infineon Technologies
Packaging
Tape & Reel (TR)
Series
OptiMOS™ 3
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
88A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
11mOhm @ 88A, 10V
Vgs(th) (Max) @ Id
4.2V @ 260µA
Gate Charge (Qg) (Max) @ Vgs
76 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
650 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
250W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TO263-3
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Base Product Number
IPB110
Datasheet & Documents
Datasheets
Additional Information
Other Names
SP001503864
IPB110N20N3LFATMA1DKR
IPB110N20N3LFATMA1TR
IPB110N20N3LFATMA1CT
IPB110N20N3LFATMA1-DG
2156-IPB110N20N3LFATMA1TR
Standard Package
1,000
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
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