Manufacturer Product Number:
IPB60R160P6ATMA1
Product Overview
Manufacturer:
Infineon Technologies
DiGi Electronics Part Number:
IPB60R160P6ATMA1-DG
Description:
MOSFET N-CH 600V 23.8A D2PAK
Detailed Description:
N-Channel 600 V 23.8A (Tc) 176W (Tc) Surface Mount PG-TO263-3
Inventory:
2850 Pcs New Original In Stock
12799740
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IPB60R160P6ATMA1 Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Infineon Technologies
Packaging
Tape & Reel (TR)
Series
CoolMOS™ P6
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
23.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
160mOhm @ 9A, 10V
Vgs(th) (Max) @ Id
4.5V @ 750µA
Gate Charge (Qg) (Max) @ Vgs
44 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2080 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
176W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TO263-3
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Base Product Number
IPB60R160
Datasheet & Documents
Datasheets
Additional Information
Other Names
IPB60R160P6ATMA1-DG
448-IPB60R160P6ATMA1TR
448-IPB60R160P6ATMA1DKR
SP001313876
448-IPB60R160P6ATMA1CT
Standard Package
1,000
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
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