Manufacturer Product Number:
IPB65R600C6ATMA1
Product Overview
Manufacturer:
Infineon Technologies
DiGi Electronics Part Number:
IPB65R600C6ATMA1-DG
Description:
MOSFET N-CH 650V 7.3A D2PAK
Detailed Description:
N-Channel 650 V 7.3A (Tc) 63W (Tc) Surface Mount PG-TO263-3
Inventory:
12800561
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IPB65R600C6ATMA1 Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Infineon Technologies
Packaging
-
Series
CoolMOS™
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
7.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
600mOhm @ 2.1A, 10V
Vgs(th) (Max) @ Id
3.5V @ 210µA
Gate Charge (Qg) (Max) @ Vgs
23 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
440 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
63W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TO263-3
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Base Product Number
IPB65R
Datasheet & Documents
Datasheets
Additional Information
Other Names
IPB65R600C6ATMA1TR
IPB65R600C6
IPB65R600C6-DG
IPB65R600C6DKR-DG
SP000794382
IPB65R600C6ATMA1DKR
IPB65R600C6CT-DG
IPB65R600C6DKR
IPB65R600C6ATMA1CT
IPB65R600C6CT
IPB65R600C6TR-DG
Standard Package
1,000
Environmental & Export Classification
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Alternative Models
PART NUMBER
STB8N65M5
MANUFACTURER
STMicroelectronics
QUANTITY AVAILABLE
531
DiGi PART NUMBER
STB8N65M5-DG
UNIT PRICE
1.20
SUBSTITUTE TYPE
MFR Recommended
PART NUMBER
SIHD6N65ET1-GE3
MANUFACTURER
Vishay Siliconix
QUANTITY AVAILABLE
0
DiGi PART NUMBER
SIHD6N65ET1-GE3-DG
UNIT PRICE
0.59
SUBSTITUTE TYPE
MFR Recommended
PART NUMBER
IXFA16N60P3
MANUFACTURER
IXYS
QUANTITY AVAILABLE
0
DiGi PART NUMBER
IXFA16N60P3-DG
UNIT PRICE
4.80
SUBSTITUTE TYPE
MFR Recommended
DIGI Certification
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