Manufacturer Product Number:
IPB80N04S2H4-ATMA2
Product Overview
Manufacturer:
Infineon Technologies
DiGi Electronics Part Number:
IPB80N04S2H4-ATMA2-DG
Description:
N-CHANNEL POWER MOSFET
Detailed Description:
N-Channel 40 V 80A (Tc) 300W (Tc) Surface Mount PG-TO263-3-2
Inventory:
12967927
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IPB80N04S2H4-ATMA2 Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Infineon Technologies
Packaging
-
Series
CoolMOS™
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
40 V
Current - Continuous Drain (Id) @ 25°C
80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
3.7mOhm @ 80A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
148 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
4400 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
300W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TO263-3-2
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Datasheet & Documents
Datasheets
Additional Information
Other Names
INFINFIPB80N04S2H4-ATMA2
2156-IPB80N04S2H4-ATMA2
Standard Package
144
Environmental & Export Classification
RoHS Status
Not applicable
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Affected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
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