Manufacturer Product Number:
IPB80N06S2L07ATMA3
Product Overview
Manufacturer:
Infineon Technologies
DiGi Electronics Part Number:
IPB80N06S2L07ATMA3-DG
Description:
MOSFET N-CH 55V 80A TO263-3
Detailed Description:
N-Channel 55 V 80A (Tc) 210W (Tc) Surface Mount PG-TO263-3-2
Inventory:
12803614
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IPB80N06S2L07ATMA3 Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Infineon Technologies
Packaging
Tape & Reel (TR)
Series
OptiMOS™
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
55 V
Current - Continuous Drain (Id) @ 25°C
80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
6.7mOhm @ 60A, 10V
Vgs(th) (Max) @ Id
2V @ 150µA
Gate Charge (Qg) (Max) @ Vgs
130 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
3160 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
210W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TO263-3-2
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Base Product Number
IPB80N
Datasheet & Documents
Datasheets
Additional Information
Other Names
448-IPB80N06S2L07ATMA3TR
SP001067890
IFEINFIPB80N06S2L07ATMA3
IPB80N06S2L07ATMA3CT-DG
IPB80N06S2L07ATMA3DKR
IPB80N06S2L07ATMA3TR-DG
448-IPB80N06S2L07ATMA3DKR
IPB80N06S2L07ATMA3CT
2156-IPB80N06S2L07ATMA3
IPB80N06S2L07ATMA3TR
448-IPB80N06S2L07ATMA3CT
IPB80N06S2L07ATMA3DKR-DG
IPB80N06S2L07ATMA3-DG
Standard Package
1,000
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
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