Manufacturer Product Number:
IPD50R650CEATMA1
Product Overview
Manufacturer:
Infineon Technologies
DiGi Electronics Part Number:
IPD50R650CEATMA1-DG
Description:
MOSFET N-CH 500V 6.1A TO252-3
Detailed Description:
N-Channel 500 V 6.1A (Tc) 69W (Tc) Surface Mount PG-TO252-3
Inventory:
12801850
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IPD50R650CEATMA1 Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Infineon Technologies
Packaging
-
Series
CoolMOS™ CE
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
500 V
Current - Continuous Drain (Id) @ 25°C
6.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
13V
Rds On (Max) @ Id, Vgs
650mOhm @ 1.8A, 13V
Vgs(th) (Max) @ Id
3.5V @ 150µA
Gate Charge (Qg) (Max) @ Vgs
15 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
342 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
69W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TO252-3
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63
Base Product Number
IPD50R
Datasheet & Documents
Datasheets
Additional Information
Other Names
IPD50R650CEATMA1DKR
IPD50R650CEATMA1CT
IPD50R650CEATMA1-DG
SP001117708
IPD50R650CEATMA1TR
Standard Package
2,500
Environmental & Export Classification
Moisture Sensitivity Level (MSL)
3 (168 Hours)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Alternative Models
PART NUMBER
IPD50R650CEAUMA1
MANUFACTURER
Infineon Technologies
QUANTITY AVAILABLE
1584
DiGi PART NUMBER
IPD50R650CEAUMA1-DG
UNIT PRICE
0.27
SUBSTITUTE TYPE
Direct
DIGI Certification
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