Manufacturer Product Number:
IPD60N10S4L12ATMA1
Product Overview
Manufacturer:
Infineon Technologies
DiGi Electronics Part Number:
IPD60N10S4L12ATMA1-DG
Description:
MOSFET N-CH 100V 60A TO252-3
Detailed Description:
N-Channel 100 V 60A (Tc) 94W (Tc) Surface Mount PG-TO252-3-313
Inventory:
71745 Pcs New Original In Stock
12800829
Request Quote
Quantity
Minimum 1
Minimum 1
(*) is mandatory
We'll get back to you within 24 hours
We'll get back to you within 24 hours
SUBMIT
IPD60N10S4L12ATMA1 Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Infineon Technologies
Packaging
Tape & Reel (TR)
Series
HEXFET®
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
12mOhm @ 60A, 10V
Vgs(th) (Max) @ Id
2.1V @ 46µA
Gate Charge (Qg) (Max) @ Vgs
49 nC @ 10 V
Vgs (Max)
±16V
Input Capacitance (Ciss) (Max) @ Vds
3170 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
94W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
Automotive
Qualification
AEC-Q101
Mounting Type
Surface Mount
Supplier Device Package
PG-TO252-3-313
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63
Base Product Number
IPD60N10
Datasheet & Documents
Datasheets
Additional Information
Other Names
IPD60N10S4L12ATMA1DKR
SP000866550
IPD60N10S4L12ATMA1TR
IPD60N10S4L12ATMA1-DG
IPD60N10S4L12ATMA1CT
Standard Package
2,500
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
Related Products
IPB80N06S2L09ATMA2
MOSFET N-CH 55V 80A TO263-3
IPB64N25S320ATMA1
MOSFET N-CH 250V 64A TO263-3
IPFH6N03LA G
MOSFET N-CH 25V 50A TO252-3
