IPD65R225C7ATMA1
Manufacturer Product Number:

IPD65R225C7ATMA1

Product Overview

Manufacturer:

Infineon Technologies

DiGi Electronics Part Number:

IPD65R225C7ATMA1-DG

Description:

MOSFET N-CH 650V 11A TO252-3
Detailed Description:
N-Channel 650 V 11A (Tc) 63W (Tc) Surface Mount PG-TO252-3

Inventory:

3863 Pcs New Original In Stock
12803766
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IPD65R225C7ATMA1 Technical Specifications

Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Infineon Technologies
Packaging
Tape & Reel (TR)
Series
CoolMOS™ C7
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
11A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
225mOhm @ 4.8A, 10V
Vgs(th) (Max) @ Id
4V @ 240µA
Gate Charge (Qg) (Max) @ Vgs
20 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
996 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
63W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TO252-3
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63
Base Product Number
IPD65R225

Datasheet & Documents

Additional Information

Other Names
IPD65R225C7ATMA1CT
SP000929430
IPD65R225C7ATMA1DKR
IPD65R225C7ATMA1TR
Standard Package
2,500

Environmental & Export Classification

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
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