Manufacturer Product Number:
IPD65R600E6ATMA1
Product Overview
Manufacturer:
Infineon Technologies
DiGi Electronics Part Number:
IPD65R600E6ATMA1-DG
Description:
MOSFET N-CH 650V 7.3A TO252-3
Detailed Description:
N-Channel 650 V 7.3A (Tc) 63W (Tc) Surface Mount PG-TO252-3
Inventory:
12803043
Request Quote
Quantity
Minimum 1
Minimum 1
(*) is mandatory
We'll get back to you within 24 hours
We'll get back to you within 24 hours
SUBMIT
IPD65R600E6ATMA1 Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Infineon Technologies
Packaging
-
Series
CoolMOS™ E6
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
7.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
600mOhm @ 2.1A, 10V
Vgs(th) (Max) @ Id
3.5V @ 210µA
Gate Charge (Qg) (Max) @ Vgs
23 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
440 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
63W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TO252-3
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63
Base Product Number
IPD65R600
Datasheet & Documents
Datasheets
Additional Information
Other Names
SP001117096
2156-IPD65R600E6ATMA1
ROCINFIPD65R600E6ATMA1
Standard Package
2,500
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Alternative Models
PART NUMBER
STD11N60DM2
MANUFACTURER
STMicroelectronics
QUANTITY AVAILABLE
1905
DiGi PART NUMBER
STD11N60DM2-DG
UNIT PRICE
0.67
SUBSTITUTE TYPE
MFR Recommended
PART NUMBER
IPD70R600P7SAUMA1
MANUFACTURER
Infineon Technologies
QUANTITY AVAILABLE
12894
DiGi PART NUMBER
IPD70R600P7SAUMA1-DG
UNIT PRICE
0.26
SUBSTITUTE TYPE
MFR Recommended
DIGI Certification
Related Products
IRF7477
MOSFET N-CH 30V 14A 8SO
IPA65R380C6XKSA1
MOSFET N-CH 650V 10.6A TO220
IRF9530NS
MOSFET P-CH 100V 14A D2PAK
