Manufacturer Product Number:
IPD80R3K3P7ATMA1
Product Overview
Manufacturer:
Infineon Technologies
DiGi Electronics Part Number:
IPD80R3K3P7ATMA1-DG
Description:
MOSFET N-CH 800V 1.9A TO252-3
Detailed Description:
N-Channel 800 V 1.9A (Tc) 18W (Tc) Surface Mount PG-TO252-3
Inventory:
5000 Pcs New Original In Stock
12803311
Request Quote
Quantity
Minimum 1
Minimum 1
(*) is mandatory
We'll get back to you within 24 hours
We'll get back to you within 24 hours
SUBMIT
IPD80R3K3P7ATMA1 Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Infineon Technologies
Packaging
Tape & Reel (TR)
Series
CoolMOS™ P7
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
800 V
Current - Continuous Drain (Id) @ 25°C
1.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
3.3Ohm @ 590mA, 10V
Vgs(th) (Max) @ Id
3.5V @ 30µA
Gate Charge (Qg) (Max) @ Vgs
5.8 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
120 pF @ 500 V
FET Feature
-
Power Dissipation (Max)
18W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TO252-3
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63
Base Product Number
IPD80R3
Datasheet & Documents
Datasheets
Additional Information
Other Names
IFEINFIPD80R3K3P7ATMA1
IPD80R3K3P7ATMA1DKR
2156-IPD80R3K3P7ATMA1
IPD80R3K3P7ATMA1TR
IPD80R3K3P7ATMA1CT
SP001636440
Standard Package
2,500
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
Related Products
IRFB4710PBF
MOSFET N-CH 100V 75A TO220AB
IRF7424PBF
MOSFET P-CH 30V 11A 8SO
IPC60R520E6X1SA1
MOSFET N-CH BARE DIE