Manufacturer Product Number:
IPI076N15N5AKSA1
Product Overview
Manufacturer:
Infineon Technologies
DiGi Electronics Part Number:
IPI076N15N5AKSA1-DG
Description:
MV POWER MOS
Detailed Description:
N-Channel 150 V 112A (Tc) 214W (Tc) Through Hole PG-TO262-3
Inventory:
455 Pcs New Original In Stock
12803224
Request Quote
Quantity
Minimum 1
Minimum 1
(*) is mandatory
We'll get back to you within 24 hours
We'll get back to you within 24 hours
SUBMIT
IPI076N15N5AKSA1 Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Infineon Technologies
Packaging
Tube
Series
OptiMOS™
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
150 V
Current - Continuous Drain (Id) @ 25°C
112A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
8V, 10V
Rds On (Max) @ Id, Vgs
7.6mOhm @ 56A, 10V
Vgs(th) (Max) @ Id
4.6V @ 160µA
Gate Charge (Qg) (Max) @ Vgs
61 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
4700 pF @ 75 V
FET Feature
-
Power Dissipation (Max)
214W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO262-3
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
Base Product Number
IPI076
Datasheet & Documents
Datasheets
Additional Information
Other Names
IPI076N15N5AKSA1-DG
448-IPI076N15N5AKSA1
SP001326438
Standard Package
50
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
Related Products
IPB029N06N3GE8187ATMA1
MOSFET N-CH 60V 120A D2PAK
IPT020N10N3ATMA1
MOSFET N-CH 100V 300A 8HSOF
IPW60R280P6FKSA1
MOSFET N-CH 600V 13.8A TO247-3
