Manufacturer Product Number:
IPI111N15N3GAKSA1
Product Overview
Manufacturer:
Infineon Technologies
DiGi Electronics Part Number:
IPI111N15N3GAKSA1-DG
Description:
MOSFET N-CH 150V 83A TO262-3
Detailed Description:
N-Channel 150 V 83A (Tc) 214W (Tc) Through Hole PG-TO262-3
Inventory:
500 Pcs New Original In Stock
12805026
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IPI111N15N3GAKSA1 Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Infineon Technologies
Packaging
Tube
Series
OptiMOS™
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
150 V
Current - Continuous Drain (Id) @ 25°C
83A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
8V, 10V
Rds On (Max) @ Id, Vgs
11.1mOhm @ 83A, 10V
Vgs(th) (Max) @ Id
4V @ 160µA
Gate Charge (Qg) (Max) @ Vgs
55 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
3230 pF @ 75 V
FET Feature
-
Power Dissipation (Max)
214W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO262-3
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
Base Product Number
IPI111
Datasheet & Documents
Datasheets
Additional Information
Other Names
2156-IPI111N15N3GAKSA1-448
IPI111N15N3 G
SP000680232
IPI111N15N3 G-DG
Standard Package
500
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
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