Manufacturer Product Number:
IPI120N10S405AKSA1
Product Overview
Manufacturer:
Infineon Technologies
DiGi Electronics Part Number:
IPI120N10S405AKSA1-DG
Description:
MOSFET N-CH 100V 120A TO262-3
Detailed Description:
N-Channel 100 V 120A (Tc) 190W (Tc) Through Hole PG-TO262-3-1
Inventory:
12801582
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IPI120N10S405AKSA1 Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Infineon Technologies
Packaging
-
Series
OptiMOS™
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
5.3mOhm @ 100A, 10V
Vgs(th) (Max) @ Id
3.5V @ 120µA
Gate Charge (Qg) (Max) @ Vgs
91 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
6540 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
190W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
Automotive
Qualification
AEC-Q101
Mounting Type
Through Hole
Supplier Device Package
PG-TO262-3-1
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
Base Product Number
IPI120N
Datasheet & Documents
Datasheets
Additional Information
Other Names
SP001102622
INFINFIPI120N10S405AKSA1
2156-IPI120N10S405AKSA1
Standard Package
500
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
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