Manufacturer Product Number:
IPI147N12N3GAKSA1
Product Overview
Manufacturer:
Infineon Technologies
DiGi Electronics Part Number:
IPI147N12N3GAKSA1-DG
Description:
MOSFET N-CH 120V 56A TO262-3
Detailed Description:
N-Channel 120 V 56A (Ta) 107W (Tc) Through Hole PG-TO262-3
Inventory:
12804967
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IPI147N12N3GAKSA1 Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Infineon Technologies
Packaging
-
Series
OptiMOS™
Product Status
Discontinued at Digi-Key
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
120 V
Current - Continuous Drain (Id) @ 25°C
56A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
14.7mOhm @ 56A, 10V
Vgs(th) (Max) @ Id
4V @ 61µA
Gate Charge (Qg) (Max) @ Vgs
49 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
3220 pF @ 60 V
FET Feature
-
Power Dissipation (Max)
107W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO262-3
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
Base Product Number
IPI147
Datasheet & Documents
Datasheets
Additional Information
Other Names
IFEINFIPI147N12N3GAKSA1
IPI147N12N3 G-DG
2156-IPI147N12N3GAKSA1
IPI147N12N3G
IPI147N12N3 G
SP000652744
Standard Package
500
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Alternative Models
PART NUMBER
FDI150N10
MANUFACTURER
onsemi
QUANTITY AVAILABLE
3338
DiGi PART NUMBER
FDI150N10-DG
UNIT PRICE
1.16
SUBSTITUTE TYPE
MFR Recommended
DIGI Certification
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