Manufacturer Product Number:
IPI65R190CFDXKSA2
Product Overview
Manufacturer:
Infineon Technologies
DiGi Electronics Part Number:
IPI65R190CFDXKSA2-DG
Description:
MOSFET N-CH 650V 17.5A TO262-3
Detailed Description:
N-Channel 650 V 17.5A (Tc) 151W (Tc) Through Hole PG-TO262-3
Inventory:
12801294
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IPI65R190CFDXKSA2 Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Infineon Technologies
Packaging
Tube
Series
CoolMOS™ CFD2
Product Status
Last Time Buy
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
17.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
190mOhm @ 7.3A, 10V
Vgs(th) (Max) @ Id
4.5V @ 700µA
Gate Charge (Qg) (Max) @ Vgs
68 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1850 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
151W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO262-3
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
Base Product Number
IPI65R190
Datasheet & Documents
Datasheets
Additional Information
Other Names
SP001987344
448-IPI65R190CFDXKSA2
IPI65R190CFDXKSA2-DG
Standard Package
500
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
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