Manufacturer Product Number:
IPL65R650C6SATMA1
Product Overview
Manufacturer:
Infineon Technologies
DiGi Electronics Part Number:
IPL65R650C6SATMA1-DG
Description:
MOSFET N-CH 650V 6.7A THIN-PAK
Detailed Description:
N-Channel 650 V 6.7A (Tc) 56.8W (Tc) Surface Mount PG-TSON-8-2
Inventory:
12803035
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IPL65R650C6SATMA1 Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Infineon Technologies
Packaging
Tape & Reel (TR)
Series
CoolMOS™ C6
Product Status
Last Time Buy
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
6.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
650mOhm @ 2.1A, 10V
Vgs(th) (Max) @ Id
3.5V @ 210µA
Gate Charge (Qg) (Max) @ Vgs
21 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
440 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
56.8W (Tc)
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TSON-8-2
Package / Case
8-PowerTDFN
Base Product Number
IPL65R650
Datasheet & Documents
Datasheets
Additional Information
Other Names
SP001163082
2156-IPL65R650C6SATMA1
INFINFIPL65R650C6SATMA1
Standard Package
5,000
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Alternative Models
PART NUMBER
GC11N65D5
MANUFACTURER
Goford Semiconductor
QUANTITY AVAILABLE
0
DiGi PART NUMBER
GC11N65D5-DG
UNIT PRICE
0.65
SUBSTITUTE TYPE
MFR Recommended
DIGI Certification
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